MAP4KE82AE3

Teknik Özellikler

Number Of Elements

1

Case Connection

ISOLATED

Rep Pk Reverse Voltagemax

70.1 V

Working Voltage

70.1 V

Diode Type

TRANS VOLTAGE SUPPRESSOR DIODE

Çalışma Sıcaklığı

-65°C ~ 150°C (TJ)

Breakdown Voltagemin

77.9 V

Current Peak Pulse101000s

3.5A

Voltage Reverse Standoff Typ

70.1V

Terminal Kaplaması

MATTE TIN

Ipp Peak Pulse Current

3.5 A

Nonrep Peak Rev Power Dismax

400 W

Reflow Temperaturemax S

NOT SPECIFIED

Maks. Çalışma Sıcaklığı

+ 150 C

Ürün Durumu

Active

Applications

General Purpose

Ambalaj

Bulk

Qualification Status

Not Qualified

Montaj Tipi

Through Hole

Power Dissipation Max

1.13 W

Diode Element Material

SILICON

Package Description

O-PALF-W2

HTS Kodu

8541.10.00.50

Yüzey Montaj

NO

Breakdown Voltagemax

86.1 V

Technology

AVALANCHE

Clamping Voltage

113 V

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

O-PALF-W2

Risk Rank

5.56

Ürün Tipi

TVS Diodes

Ihs Manufacturer

MICROSEMI CORP

Vf Forward Voltage

3.5 V

Üretici Parça No

MAP4KE82AE3

Package Shape

ROUND

Configuration

SINGLE

Package Style

LONG FORM

Terminal Formu

WIRE

Minimum Operating Temperature

- 65 C

Voltage Breakdown Min

77.9V