Adet bazlı fiyat
- 1+ adet$10.86
- 10+ adet$10.25
- 100+ adet$9.67
- 500+ adet$9.12
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Minimum Operating Temperature
- - 65 C
- Voltage Breakdown Min
- 64.6V
- Package Shape
- ROUND
- Üretici Parça No
- MAP4KE6.8A
- Terminal Formu
- WIRE
- Package Style
- LONG FORM
- Configuration
- SINGLE
- Vf Forward Voltage
- 3.5 V
- Ürün Tipi
- TVS Diodes
- Ihs Manufacturer
- MICROSEMI CORP
- Clamping Voltage
- 10.5 V
- Breakdown Voltagemax
- 7.14 V
- Technology
- AVALANCHE
- Yüzey Montaj
- NO
- Risk Rank
- 5.56
- Jesd30 Code
- O-PALF-W2
- Package Body Material
- PLASTIC/EPOXY
- Diode Element Material
- SILICON
- Montaj Tipi
- Through Hole
- Power Dissipation Max
- 1.13 W
- HTS Kodu
- 8541.10.00.50
- Package Description
- PLASTIC, DO-41, 2 PIN
- Ürün Durumu
- Active
- Reflow Temperaturemax S
- NOT SPECIFIED
- Maks. Çalışma Sıcaklığı
- + 150 C
- Nonrep Peak Rev Power Dismax
- 400 W
- Applications
- General Purpose
- Ambalaj
- Bulk
- Qualification Status
- Not Qualified
- Terminal Kaplaması
- TIN LEAD
- Voltage Reverse Standoff Typ
- 58.1V
- Breakdown Voltagemin
- 6.45 V
- Current Peak Pulse101000s
- 4.4A
- Ipp Peak Pulse Current
- 38 A
- Case Connection
- ISOLATED
- Rep Pk Reverse Voltagemax
- 5.8 V
- Number Of Elements
- 1
- Çalışma Sıcaklığı
- -65°C ~ 150°C (TJ)
- Diode Type
- TRANS VOLTAGE SUPPRESSOR DIODE
- Working Voltage
- 5.8 V
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