Adet bazlı fiyat
- 1+ adet$10.88
- 10+ adet$10.26
- 100+ adet$9.68
- 500+ adet$9.14
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Voltage Breakdown Min
- 25.7V
- Minimum Operating Temperature
- - 65 C
- Terminal Formu
- WIRE
- Package Style
- LONG FORM
- Configuration
- SINGLE
- Package Shape
- ROUND
- Üretici Parça No
- MAP4KE27AE3
- Vf Forward Voltage
- 3.5 V
- Ihs Manufacturer
- MICROSEMI CORP
- Risk Rank
- 5.56
- Jesd30 Code
- O-PALF-W2
- Package Body Material
- PLASTIC/EPOXY
- Clamping Voltage
- 37.5 V
- Breakdown Voltagemax
- 28.4 V
- Technology
- AVALANCHE
- Yüzey Montaj
- NO
- HTS Kodu
- 8541.10.00.50
- Package Description
- O-PALF-W2
- Diode Element Material
- SILICON
- Montaj Tipi
- Through Hole
- Power Dissipation Max
- 1.13 W
- Applications
- General Purpose
- Ambalaj
- Bulk
- Qualification Status
- Not Qualified
- Ürün Durumu
- Active
- Reflow Temperaturemax S
- NOT SPECIFIED
- Maks. Çalışma Sıcaklığı
- + 150 C
- Nonrep Peak Rev Power Dismax
- 400 W
- Ipp Peak Pulse Current
- 11 A
- Terminal Kaplaması
- MATTE TIN
- Voltage Reverse Standoff Typ
- 23.1V
- Breakdown Voltagemin
- 25.7 V
- Current Peak Pulse101000s
- 11A
- Çalışma Sıcaklığı
- -65°C ~ 150°C (TJ)
- Diode Type
- TRANS VOLTAGE SUPPRESSOR DIODE
- Working Voltage
- 23.1 V
- Case Connection
- ISOLATED
- Rep Pk Reverse Voltagemax
- 23.1 V
- Number Of Elements
- 1
- Power Line Protection
- No
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