JANTXV2N5003

Teknik Özellikler

Ürün Tipi

BJTs - Bipolar Transistors

Reference Standard

MIL-19500/535B

Dc Current Gainmin Hfe

20

Kurşunsuz Kodu

No

Tedarikçi Cihaz Paketi

TO-59

Vce Saturation Max Ib Ic

1.5V @ 500mA, 5A

Package Description

POST/STUD MOUNT, O-MUPM-D3

Çalışma Sıcaklığı

-65°C ~ 200°C (TJ)

Currentcollector Ic Max

5 A

Temel Ürün No

2N5003

Terminal Formu

SOLDER LUG

Part Life Cycle Code

Active

Terminal Kaplaması

Tin/Lead (Sn/Pb)

JESD-609 Kodu

e0

Fabrika Paket Adedi

1

Package Style

POST/STUD MOUNT

Yüzey Montaj

NO

Reflow Temperaturemax S

NOT SPECIFIED

Technology

Si

Risk Rank

5.24

Case Connection

ISOLATED

Part Package Code

TO-59

Dc Current Gain Hfe Min Ic Vce

30 @ 2.5A, 5V

Ürün Durumu

Active

Power Max

2 W

Ihs Manufacturer

MICROSEMI CORP

Operating Temperaturemax

175 °C

Power Dissipationmax Abs

50 W

Transistor Application

SWITCHING

Package Body Material

METAL

Paket

Bulk

Qualification Status

Qualified

Pin Sayısı

3

Collector Currentmax Ic

5 A

Polaritychannel Type

PNP

Package Shape

ROUND

Transistor Type

PNP

Current Collector Cutoff Max

50μA

Kılıf / Paket

TO-210AA, TO-59-4, Stud

Number Of Terminals

3