Adet bazlı fiyat
- 1+ adet$26.76
- 10+ adet$25.24
- 100+ adet$23.81
- 500+ adet$22.47
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Collectorbase Gain Hfe Min
- 20 at 100mA, 1 V
- Tedarikçi Cihaz Paketi
- UB
- Ürün Tipi
- BJTs - Bipolar Transistors
- Minimum Operating Temperature
- - 65 C
- Paket
- Tape & Reel (TR)
- Transistor Polarity
- NPN
- Maks. Çalışma Sıcaklığı
- + 200 C
- Vce Saturation Max Ib Ic
- 450mV @ 10mA, 100mA
- Transistor Type
- NPN
- Current Collector Cutoff Max
- 400nA
- Maximum Dc Collector Current
- 100 mA
- Dc Current Gain Hfe Max
- 120 at 100 mA, 1 V
- Çalışma Sıcaklığı
- -65°C ~ 200°C (TJ)
- Kılıf / Paket
- 4-SMD, No Lead
- Montaj Stili
- SMD/SMT
- Fabrika Paket Adedi
- 1
- Emitter Base Voltage Vebo
- 4.5 V
- Seri
- Military, MIL-PRF-19500/317
- RoHS
- N
- Voltage Collector Emitter Breakdown Max
- 20 V
- Montaj Tipi
- Surface Mount
- Technology
- Si
- Collector Base Voltage Vcbo
- 40 V
- Ürün Durumu
- Active
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 100mA, 1V
- Configuration
- Single
- Collector Emitter Voltage Vceo Max
- 15 V
- Pd Power Dissipation
- 360 mW
- Power Max
- 400 mW
- Collectoremitter Saturation Voltage
- 200 mV
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