Adet bazlı fiyat
- 1+ adet$26.90
- 10+ adet$25.38
- 100+ adet$23.94
- 500+ adet$22.59
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Type
- NPN
- Technology
- Si
- Dc Current Gain Hfe Max
- 200 at 3 mA, 1 V
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 3mA, 1V
- Ürün Tipi
- BJTs - Bipolar Transistors
- Tedarikçi Cihaz Paketi
- UB
- Transistor Polarity
- NPN
- Collectoremitter Saturation Voltage
- 400 mV
- Current Collector Cutoff Max
- 1μA (ICBO)
- Pd Power Dissipation
- 200 mW
- Montaj Stili
- SMD/SMT
- Maximum Dc Collector Current
- 50 mA
- Dc Collectorbase Gain Hfe Min
- 10 at 500 uA, 10 V
- Voltage Collector Emitter Breakdown Max
- 15 V
- RoHS
- N
- Vce Saturation Max Ib Ic
- 400mV @ 1mA, 10mA
- Çalışma Sıcaklığı
- -65°C ~ 200°C (TJ)
- Configuration
- Single
- Collector Base Voltage Vcbo
- 30 V
- Power Max
- 200 mW
- Montaj Tipi
- Surface Mount
- Kılıf / Paket
- 4-SMD, No Lead
- Seri
- Military, MIL-PRF-19500/301
- Collector Emitter Voltage Vceo Max
- 15 V
- Currentcollector Ic Max
- 50 mA
- Ürün Durumu
- Active
- Paket
- Tape & Reel (TR)
- Minimum Operating Temperature
- - 65 C
- Emitter Base Voltage Vebo
- 3 V
- Fabrika Paket Adedi
- 1
- Maks. Çalışma Sıcaklığı
- + 200 C
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