Adet bazlı fiyat
- 1+ adet$60.51
- 10+ adet$57.09
- 100+ adet$53.86
- 500+ adet$50.81
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Maximum Dc Collector Current
- 600 mA
- Pd Power Dissipation
- 500 mW
- Voltage Collector Emitter Breakdown Max
- 60 V
- Power Max
- 500 mW
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 1mA, 10V
- Collectoremitter Saturation Voltage
- 400 mV
- Risk Rank
- 5.78
- REACH Uyumluluk Kodu
- compliant
- Currentcollector Ic Max
- 600 mA
- Dc Current Gain Hfe Max
- 450 at 1 mA, 10 V
- Reflow Temperaturemax S
- NOT SPECIFIED
- Maks. Çalışma Sıcaklığı
- + 200 C
- Paket
- Tape & Reel (TR)
- Power Dissipation
- 500
- Transistor Type
- PNP
- RoHS
- N
- Seri
- Military, MIL-PRF-19500/291
- Part Life Cycle Code
- Active
- Ambalaj
- Reel
- Temel Ürün No
- 2N2907
- Transistor Polarity
- PNP
- Continuous Collector Current
- 600
- Minimum Operating Temperature
- - 65 C
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Collector Base Voltage Vcbo
- 60 V
- Package Description
- ,
- Tedarikçi Cihaz Paketi
- UB
- Collector Emitter Voltage Vceo Max
- 60 V
- Current Collector Cutoff Max
- 50nA
- Configuration
- Single
- Ürün Durumu
- Active
- Rohs Code
- No
- Ürün Tipi
- BJTs - Bipolar Transistors
- Montaj Tipi
- Surface Mount
- Üretici Parça No
- JANSR2N2907AUB/TR
- Çalışma Sıcaklığı
- -65°C ~ 200°C (TJ)
- Kılıf / Paket
- 3-SMD, No Lead
- Technology
- Si
- Ihs Manufacturer
- MICROSEMI CORP
- Dc Collectorbase Gain Hfe Min
- 50 at 500mA, 10 V
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