Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Voltage Collector Emitter Breakdown Max
- 50 V
- Collector Emitter Voltage Vceo Max
- 50 V
- Pd Power Dissipation
- 500 mW
- Tedarikçi Cihaz Paketi
- UB
- Collector Base Voltage Vcbo
- 75 V
- Maximum Dc Collector Current
- 800 mA
- Minimum Operating Temperature
- - 65 C
- Dc Current Gain Hfe Max
- 325 at 1 mA, 10 V
- Configuration
- Single
- Ürün Durumu
- Active
- Currentcollector Ic Max
- 800 mA
- Collectoremitter Saturation Voltage
- 300 mV
- Current Collector Cutoff Max
- 50nA
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 150mA, 10V
- Power Max
- 500 mW
- Çalışma Sıcaklığı
- -65°C ~ 200°C (TJ)
- Transistor Type
- NPN
- Paket
- Tape & Reel (TR)
- Power Dissipation
- 500
- Montaj Tipi
- Surface Mount
- Maks. Çalışma Sıcaklığı
- + 200 C
- Ürün Tipi
- BJTs - Bipolar Transistors
- Continuous Collector Current
- 800
- Montaj Stili
- SMD/SMT
- Transistor Polarity
- NPN
- Fabrika Paket Adedi
- 1
- Vce Saturation Max Ib Ic
- 1V @ 50mA, 500mA
- Emitter Base Voltage Vebo
- 6 V
- Dc Collectorbase Gain Hfe Min
- 30 at 500mA, 10 V
- Technology
- Si
- Seri
- Military, MIL-PRF-19500/255
- RoHS
- N
- Kılıf / Paket
- 3-SMD, No Lead
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