JANS2N5796U/TR

Teknik Özellikler

Fabrika Paket Adedi

1

Dc Current Gain Hfe Max

300 at 150 mA, 10 V

Vce Saturation Max Ib Ic

1.6V @ 50mA, 500mA

Collector Emitter Voltage Vceo Max

60 V

Continuous Collector Current

600 mW

Voltage Collector Emitter Breakdown Max

60V

Minimum Operating Temperature

- 65 C

Çalışma Sıcaklığı

-65°C ~ 175°C (TJ)

Ürün Durumu

Active

Transistor Polarity

PNP

Transistor Type

2 PNP (Dual)

Collectoremitter Saturation Voltage

1.6 V

RoHS

N

Configuration

Dual

Tedarikçi Cihaz Paketi

U

Montaj Tipi

Surface Mount

Technology

Si

Currentcollector Ic Max

600mA

Pd Power Dissipation

5 W

Ürün Tipi

BJTs - Bipolar Transistors

Collector Base Voltage Vcbo

60 V

Dc Current Gain Hfe Min Ic Vce

100 @ 150mA, 10V

Kılıf / Paket

6-SMD, No Lead

Emitter Base Voltage Vebo

5 V

Power Max

600mW

Maks. Çalışma Sıcaklığı

+ 175 C

Montaj Stili

SMD/SMT

Current Collector Cutoff Max

10μA (ICBO)