JANS2N5794U

Teknik Özellikler

Transistor Type

2 NPN (Dual)

Collectoremitter Saturation Voltage

900 mV

Ürün Durumu

Active

Transistor Polarity

NPN

Technology

Si

Configuration

Dual

Tedarikçi Cihaz Paketi

U

Montaj Tipi

Surface Mount

Vce Saturation Max Ib Ic

900mV @ 30mA, 300mA

Collector Emitter Voltage Vceo Max

40 V

Minimum Operating Temperature

- 65 C

Çalışma Sıcaklığı

-65°C ~ 200°C (TJ)

Voltage Collector Emitter Breakdown Max

40V

Power Max

600mW

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 200 C

Montaj Stili

SMD/SMT

Current Collector Cutoff Max

10μA (ICBO)

Collector Base Voltage Vcbo

75 V

Dc Current Gain Hfe Min Ic Vce

100 @ 150mA, 10V

Currentcollector Ic Max

600mA

Seri

Military, MIL-PRF-19500/495

Pd Power Dissipation

600 mW

Emitter Base Voltage Vebo

6 V

Kılıf / Paket

6-SMD, No Lead