JAN2N6989U/TR

Teknik Özellikler

RoHS

N

Ürün Tipi

BJTs - Bipolar Transistors

Voltage Collector Emitter Breakdown Max

50V

Seri

Military, MIL-PRF-19500/559

Montaj Tipi

Surface Mount

Emitter Base Voltage Vebo

6 V

Configuration

Quad

Maximum Dc Collector Current

800 mA

Maks. Çalışma Sıcaklığı

+ 200 C

Currentcollector Ic Max

800mA

Pd Power Dissipation

1 W

Dc Current Gain Hfe Max

325 at 1 mA, 10 V

Dc Collectorbase Gain Hfe Min

30 at 500mA, 10 V

Collector Emitter Voltage Vceo Max

50 V

Current Collector Cutoff Max

10nA (ICBO)

Montaj Stili

SMD/SMT

Collectoremitter Saturation Voltage

300 mV

Fabrika Paket Adedi

1

Kılıf / Paket

6-SMD, No Lead

Minimum Operating Temperature

- 65 C

Ürün Durumu

Active

Dc Current Gain Hfe Min Ic Vce

100 @ 150mA, 10V

Vce Saturation Max Ib Ic

1V @ 50mA, 500mA

Paket

Tape & Reel (TR)

Technology

Si

Power Max

1W

Collector Base Voltage Vcbo

75 V

Tedarikçi Cihaz Paketi

6-SMD

Çalışma Sıcaklığı

-65°C ~ 200°C (TJ)

Transistor Polarity

NPN

Transistor Type

4 PNP (Quad)