Adet bazlı fiyat
- 1+ adet$32.25
- 10+ adet$30.43
- 100+ adet$28.71
- 500+ adet$27.08
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Current Gain Hfe Min Ic Vce
- 150 @ 1mA, 5V
- Ürün Durumu
- Active
- Transistor Polarity
- PNP
- Transistor Type
- 2 PNP (Dual)
- Collector Base Voltage Vcbo
- 60 V
- Tedarikçi Cihaz Paketi
- TO-78-6
- Çalışma Sıcaklığı
- -65°C ~ 200°C (TJ)
- Technology
- Si
- Power Max
- 350mW
- Vce Saturation Max Ib Ic
- 250mV @ 100μA, 1mA
- Paket
- Tape & Reel (TR)
- Pd Power Dissipation
- 350 mW
- Currentcollector Ic Max
- 50mA
- Maks. Çalışma Sıcaklığı
- + 200 C
- Configuration
- Dual
- Maximum Dc Collector Current
- 50 mA
- Ürün Tipi
- BJTs - Bipolar Transistors
- RoHS
- N
- Voltage Collector Emitter Breakdown Max
- 60V
- Montaj Tipi
- Through Hole
- Seri
- Military, MIL-PRF-19500/336
- Emitter Base Voltage Vebo
- 5 V
- Fabrika Paket Adedi
- 1
- Minimum Operating Temperature
- - 65 C
- Kılıf / Paket
- TO-78-6 Metal Can
- Montaj Stili
- SMD/SMT
- Collectoremitter Saturation Voltage
- 200 mV
- Current Collector Cutoff Max
- 10μA (ICBO)
- Collector Emitter Voltage Vceo Max
- 60 V
- Dc Current Gain Hfe Max
- 450 at 100 uA, 5 V
- Dc Collectorbase Gain Hfe Min
- 100 at 10 uA, 5 V
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