JAN2N3810U/TR

Teknik Özellikler

Dc Current Gain Hfe Min Ic Vce

150 @ 1mA, 5V

Ürün Durumu

Active

Transistor Polarity

PNP

Transistor Type

2 PNP (Dual)

Collector Base Voltage Vcbo

60 V

Tedarikçi Cihaz Paketi

TO-78-6

Çalışma Sıcaklığı

-65°C ~ 200°C (TJ)

Technology

Si

Power Max

350mW

Vce Saturation Max Ib Ic

250mV @ 100μA, 1mA

Paket

Tape & Reel (TR)

Pd Power Dissipation

350 mW

Currentcollector Ic Max

50mA

Maks. Çalışma Sıcaklığı

+ 200 C

Configuration

Dual

Maximum Dc Collector Current

50 mA

Ürün Tipi

BJTs - Bipolar Transistors

RoHS

N

Voltage Collector Emitter Breakdown Max

60V

Montaj Tipi

Through Hole

Seri

Military, MIL-PRF-19500/336

Emitter Base Voltage Vebo

5 V

Fabrika Paket Adedi

1

Minimum Operating Temperature

- 65 C

Kılıf / Paket

TO-78-6 Metal Can

Montaj Stili

SMD/SMT

Collectoremitter Saturation Voltage

200 mV

Current Collector Cutoff Max

10μA (ICBO)

Collector Emitter Voltage Vceo Max

60 V

Dc Current Gain Hfe Max

450 at 100 uA, 5 V

Dc Collectorbase Gain Hfe Min

100 at 10 uA, 5 V