Adet bazlı fiyat
- 1+ adet$25.69
- 10+ adet$24.24
- 100+ adet$22.87
- 500+ adet$21.57
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Current Collector Cutoff Max
- 50nA
- Collector Emitter Voltage Vceo Max
- 60 V
- Dc Current Gain Hfe Max
- 175 at 1 mA, 10 V
- Dc Collectorbase Gain Hfe Min
- 40 at 100 uA, 10 V
- Minimum Operating Temperature
- - 65 C
- Kılıf / Paket
- 4-SMD, No Lead
- Fabrika Paket Adedi
- 1
- Montaj Stili
- SMD/SMT
- Collectoremitter Saturation Voltage
- 400 mV
- Maximum Dc Collector Current
- 600 mA
- Configuration
- Single
- Voltage Collector Emitter Breakdown Max
- 60 V
- Ürün Tipi
- BJTs - Bipolar Transistors
- Temel Ürün No
- 2N2906
- RoHS
- N
- Emitter Base Voltage Vebo
- 5 V
- Montaj Tipi
- Surface Mount
- Seri
- Military, MIL-PRF-19500/291
- Currentcollector Ic Max
- 600 mA
- Pd Power Dissipation
- 500 mW
- Maks. Çalışma Sıcaklığı
- + 200 C
- Power Max
- 500 mW
- Technology
- Si
- Vce Saturation Max Ib Ic
- 1.6V @ 50mA, 500mA
- Paket
- Tape & Reel (TR)
- Transistor Polarity
- PNP
- Transistor Type
- PNP
- Çalışma Sıcaklığı
- -65°C ~ 200°C (TJ)
- Tedarikçi Cihaz Paketi
- 4-SMD
- Collector Base Voltage Vcbo
- 60 V
- Ürün Durumu
- Active
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 150mA, 10V
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