DN2625DK6-G

Teknik Özellikler

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

40

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rds On Max Id Vgs

3.5 Ω @ 1A, 0V

Fall Time Typ

20 ns

Ambalaj

Tray

Nem Hassasiyeti (MSL)

3 (168 Hours)

Turn Off Delay Time

10 ns

Yayın Yılı

2013

Weight

37.393021mg

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

2 N-Channel (Dual)

Number Of Elements

1

Gerilim

250V

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Element Configuration

Dual

Kılıf / Paket

8-VDFN Exposed Pad

Input Capacitance Ciss Max Vds

1000pF @ 25V

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Gate Charge Qg Max Vgs

7.04nC @ 1.5V

Terminal Sayısı

8

Terminal Kaplaması

MATTE TIN

Fet Feature

Depletion Mode

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Fabrika Tedarik Süresi

16 Weeks

Additional Feature

LOW THRESHOLD

Tepe Reflow Sıcaklığı (°C)

260

Continuous Drain Current Id

1.1A

Transistor Element Material

SILICON

Turn On Delay Time

10 ns

Direnç

3.5Ohm

ECCN Kodu

EAR99

Jesd30 Code

R-PDSO-N8

Akım

11A

Rise Time

20ns

Number Of Channels

2