APT75GN60BDQ2G

Teknik Özellikler

Ürün Durumu

Active

Kılıf / Paket

TO-247-3

Power Max

536 W

RoHS

Details

Giriş Tipi

Standard

Currentcollector Ic Max

155 A

Collector Emitter Voltage Vceo Max

600 V

Paket

Tube

Montaj Stili

Through Hole

Fabrika Paket Adedi

1

Pd Power Dissipation

536 W

Gate Charge

485 nC

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Maks. Çalışma Sıcaklığı

+ 175 C

Voltage Collector Emitter Breakdown Max

600 V

Temel Ürün No

APT75GN60

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Current Collector Pulsed Icm

225 A

Test Conditions

400V, 75A, 1Ohm, 15V

Continuous Collector Current At25 C

155 A

Td Onoff25c

47ns/385ns

Igbt Type

Trench Field Stop

Switching Energy

2.5mJ (on), 2.14mJ (off)

Reverse Recovery Time Trr

25 ns

Minimum Operating Temperature

- 55 C

Ürün Tipi

IGBT Transistors

Configuration

Single

Tedarikçi Cihaz Paketi

TO-247-3

Ambalaj

Tube

Vceon Max Vge Ic

1.85V @ 15V, 75A