Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Type
- NPN
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Power Dissipationmax Abs
- 120 W
- Package Body Material
- METAL
- Risk Rank
- 5.7
- Vcesatmax
- 1 V
- Collectoremitter Voltagemax
- 350 V
- Kılıf / Paket
- TO-204AA, TO-3
- Polaritychannel Type
- NPN
- Ürün Tipi
- BJTs - Bipolar Transistors
- Number Of Terminals
- 2
- Ürün Durumu
- Active
- Collector Currentmax Ic
- 7 A
- Montaj Tipi
- Through Hole
- Configuration
- SINGLE
- Yüzey Montaj
- NO
- Power Max
- 120 W
- Paket
- Bulk
- Operating Temperaturemax
- 150 °C
- Üretici Parça No
- 2N6513
- Ihs Manufacturer
- INCHANGE SEMICONDUCTOR CO LTD
- Jesd30 Code
- O-MBFM-P2
- Terminal Pozisyonu
- BOTTOM
- Currentcollector Ic Max
- 7 A
- Transition Frequencynom Ft
- 3 MHz
- Voltage Collector Emitter Breakdown Max
- 350 V
- Transistor Polarity
- NPN
- Transistor Application
- SWITCHING
- Jedec95 Code
- TO-3
- Package Shape
- ROUND
- Terminal Formu
- PIN/PEG
- Dc Current Gainmin Hfe
- 10
- REACH Uyumluluk Kodu
- unknown
- Package Description
- FLANGE MOUNT, O-MBFM-P2
- Fabrika Paket Adedi
- 1
- Package Style
- FLANGE MOUNT
- Part Life Cycle Code
- Contact Manufacturer
- Technology
- Si
- Case Connection
- COLLECTOR
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