2N5796U/TR

Teknik Özellikler

Technology

Si

Fabrika Paket Adedi

1

Ürün Tipi

BJTs - Bipolar Transistors

Collector Emitter Voltage Vceo Max

60 V

Minimum Operating Temperature

- 65 C

Configuration

Dual

Ambalaj

Reel

Dc Collectorbase Gain Hfe Min

50 at 150mA, 1 V

RoHS

N

Collectoremitter Saturation Voltage

1.6 V

Emitter Base Voltage Vebo

5 V

Maximum Dc Collector Current

600 mA

Paket

Tape & Reel (TR)

Tedarikçi Cihaz Paketi

6-SMD

Transistor Polarity

PNP

Vce Saturation Max Ib Ic

1.6V @ 50mA, 500mA

Ürün Durumu

Active

Transistor Type

2 PNP (Dual)

Current Collector Cutoff Max

10μA (ICBO)

Dc Current Gain Hfe Max

300 at 150 mA, 10 V

Maks. Çalışma Sıcaklığı

+ 175 C

Seri

Military, MIL-PRF-19500/496

Kılıf / Paket

6-SMD, No Lead

Dc Current Gain Hfe Min Ic Vce

100 @ 150mA, 10V

Collector Base Voltage Vcbo

60 V

Montaj Stili

SMD/SMT

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-65°C ~ 175°C (TJ)

Pd Power Dissipation

600 mW