2N5794U/TR

Teknik Özellikler

Vce Saturation Max Ib Ic

900mV @ 30mA, 300mA

Transistor Type

2 NPN (Dual)

Ürün Durumu

Active

Current Collector Cutoff Max

10μA (ICBO)

Dc Current Gain Hfe Max

300 at 150 mA, 10 V

Seri

Military, MIL-PRF-19500/495

Maks. Çalışma Sıcaklığı

+ 200 C

Dc Current Gain Hfe Min Ic Vce

100 @ 150mA, 10V

Kılıf / Paket

6-SMD, No Lead

Montaj Stili

SMD/SMT

Collector Base Voltage Vcbo

75 V

Pd Power Dissipation

600 mW

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-65°C ~ 200°C (TJ)

Fabrika Paket Adedi

1

Technology

Si

Ürün Tipi

BJTs - Bipolar Transistors

Collector Emitter Voltage Vceo Max

40 V

Minimum Operating Temperature

- 65 C

Dc Collectorbase Gain Hfe Min

35 at 100 uA, 10 V

Ambalaj

Reel

Configuration

Dual

Collectoremitter Saturation Voltage

900 mV

Emitter Base Voltage Vebo

6 V

Maximum Dc Collector Current

600 mA

RoHS

N

Tedarikçi Cihaz Paketi

6-SMD

Transistor Polarity

NPN

Paket

Tape & Reel (TR)