Adet bazlı fiyat
- 1+ adet$38.85
- 10+ adet$36.65
- 100+ adet$34.58
- 500+ adet$32.62
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Terminal Kaplaması
- TIN LEAD
- Qualification Status
- Not Qualified
- Package Shape
- ROUND
- Temel Ürün No
- 2N4900
- Rohs Code
- No
- Yüzey Montaj
- NO
- Kurşunsuz Kodu
- No
- Kılıf / Paket
- TO-66-2
- Montaj Stili
- Through Hole
- Collector Emitter Voltage Vceo Max
- 80 V
- REACH Uyumluluk Kodu
- unknown
- Package Body Material
- METAL
- Reflow Temperaturemax S
- NOT SPECIFIED
- Dc Current Gainmin Hfe
- 20
- JESD-609 Kodu
- e0
- Dc Current Gain Hfe Max
- 100
- Ürün Durumu
- Active
- Transistor Polarity
- PNP
- Maximum Dc Collector Current
- 1 A
- Polaritychannel Type
- PNP
- Collectoremitter Saturation Voltage
- 1.3 V
- Part Life Cycle Code
- Active
- Terminal Formu
- PIN/PEG
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Continuous Collector Current
- 1
- Collector Base Voltage Vcbo
- 80 V
- Ambalaj
- Tray
- Package Style
- FLANGE MOUNT
- Jesd30 Code
- O-MBFM-P2
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Paket
- Bulk
- Configuration
- Single
- Maks. Çalışma Sıcaklığı
- + 200 C
- Dc Collectorbase Gain Hfe Min
- 20
- Minimum Operating Temperature
- - 65 C
- Fabrika Paket Adedi
- 1
- Risk Rank
- 5.12
- Ihs Manufacturer
- MICROSEMI CORP
- Pd Power Dissipation
- 25 W
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