2N4854U/TR

Teknik Özellikler

Ürün Tipi

BJTs - Bipolar Transistors

Paket

Tape & Reel (TR)

Vce Saturation Max Ib Ic

400mV @ 15mA, 150mA

Dc Current Gain Hfe Min Ic Vce

100 @ 150mA, 10V

Collector Base Voltage Vcbo

60 V

Current Collector Cutoff Max

10μA (ICBO)

Montaj Tipi

Surface Mount

Ambalaj

Reel

Montaj Stili

SMD/SMT

Fabrika Paket Adedi

1

Pd Power Dissipation

600 mW

Collector Emitter Voltage Vceo Max

40 V

Kılıf / Paket

6-SMD, No Lead

Configuration

Dual

Minimum Operating Temperature

- 65 C

Dc Collectorbase Gain Hfe Min

35 at 100 uA, 10 V

Maks. Çalışma Sıcaklığı

+ 200 C

Transistor Polarity

NPN, PNP

Ürün Durumu

Active

Technology

Si

Dc Current Gain Hfe Max

300 at 150 mA, 10 V

RoHS

N

Maximum Dc Collector Current

600 mA

Emitter Base Voltage Vebo

5 V

Collectoremitter Saturation Voltage

400 mV

Seri

Military, MIL-PRF-19500/421

Çalışma Sıcaklığı

-65°C ~ 200°C (TJ)

Tedarikçi Cihaz Paketi

6-SMD

Transistor Type

NPN, PNP