2N3838/TR

Teknik Özellikler

Configuration

Dual

Kılıf / Paket

6-FlatPack

Maks. Çalışma Sıcaklığı

+ 200 C

Dc Collectorbase Gain Hfe Min

35 at 100 uA, 10 V

Minimum Operating Temperature

- 65 C

Fabrika Paket Adedi

1

Montaj Stili

SMD/SMT

Collector Emitter Voltage Vceo Max

40 V

Pd Power Dissipation

350 mW

Montaj Tipi

Surface Mount

Current Collector Cutoff Max

10μA (ICBO)

Collector Base Voltage Vcbo

60 V

Ambalaj

Reel

Ürün Tipi

BJTs - Bipolar Transistors

Power Max

350mW

Dc Current Gain Hfe Min Ic Vce

100 @ 150mA, 10V

Paket

Tape & Reel (TR)

Vce Saturation Max Ib Ic

400mV @ 15mA, 150mA

Çalışma Sıcaklığı

-65°C ~ 200°C (TJ)

Collectoremitter Saturation Voltage

400 mV

Voltage Collector Emitter Breakdown Max

40V

Transistor Type

NPN, PNP

Tedarikçi Cihaz Paketi

6-Flatpack

Emitter Base Voltage Vebo

5 V

Technology

Si

Dc Current Gain Hfe Max

300 at 150 mA, 10 V

Ürün Durumu

Active

Transistor Polarity

NPN, PNP

Currentcollector Ic Max

600mA

Maximum Dc Collector Current

600 mA

RoHS

N