Adet bazlı fiyat
- 1+ adet$35.31
- 10+ adet$33.31
- 100+ adet$31.43
- 500+ adet$29.65
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Collector Base Voltage Vcbo
- 40 V
- Pd Power Dissipation
- 360 mW
- Dc Collectorbase Gain Hfe Min
- 40
- Configuration
- Single
- Çalışma Sıcaklığı
- -65°C ~ 200°C (TJ)
- Ürün Tipi
- BJTs - Bipolar Transistors
- Technology
- Si
- Montaj Stili
- Through Hole
- Vce Saturation Max Ib Ic
- 450mV @ 10mA, 100mA
- RoHS
- N
- Kılıf / Paket
- 4-SMD
- Current Collector Cutoff Max
- 400nA
- Voltage Collector Emitter Breakdown Max
- 15 V
- Ürün Durumu
- Active
- Collectoremitter Saturation Voltage
- 450 mV
- Paket
- Tape & Reel (TR)
- Collector Emitter Voltage Vceo Max
- 15 V
- Maks. Çalışma Sıcaklığı
- + 200 C
- Tedarikçi Cihaz Paketi
- SMD
- Transistor Polarity
- NPN
- Ambalaj
- Reel
- Fabrika Paket Adedi
- 1
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 100mA, 1V
- Minimum Operating Temperature
- - 65 C
- Montaj Tipi
- Surface Mount
- Emitter Base Voltage Vebo
- 4.5 V
- Dc Current Gain Hfe Max
- 120
- Transistor Type
- NPN
- Power Max
- 360 mW
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