Adet bazlı fiyat
- 1+ adet$28.91
- 10+ adet$27.27
- 100+ adet$25.73
- 500+ adet$24.27
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Power Max
- 650 mW
- Ambalaj
- Cut Tape
- RoHS
- N
- Collector Base Voltage Vcbo
- 75 V
- Seri
- 2N2222
- Transistor Type
- NPN
- Configuration
- Single
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -65°C ~ 200°C (TJ)
- Fabrika Paket Adedi
- 100
- Dc Current Gain Hfe Max
- 325 at 1 mA, 10 V
- Vce Saturation Max Ib Ic
- 1V @ 50mA, 500mA
- Currentcollector Ic Max
- 800 mA
- Pd Power Dissipation
- 500 mW
- Continuous Collector Current
- 800
- Ürün Tipi
- BJTs - Bipolar Transistors
- Kılıf / Paket
- 4-SMD
- Montaj Stili
- SMD/SMT
- Collector Emitter Voltage Vceo Max
- 50 V
- Technology
- Si
- Minimum Operating Temperature
- - 65 C
- Collectoremitter Saturation Voltage
- 300 mV
- Power Dissipation
- 500
- Maks. Çalışma Sıcaklığı
- + 200 C
- Paket
- Tape & Reel (TR)
- Transistor Polarity
- NPN
- Tedarikçi Cihaz Paketi
- 4-SMD
- Ürün Durumu
- Active
- Voltage Collector Emitter Breakdown Max
- 50 V
- Dc Collectorbase Gain Hfe Min
- 30 at 500mA, 10 V
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 150mA, 10V
- Current Collector Cutoff Max
- 50nA
- Emitter Base Voltage Vebo
- 6 V
- Maximum Dc Collector Current
- 800 mA
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