Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Output Power
- 270 W
- Package Description
- FLANGE MOUNT, R-CDFM-F2
- Ihs Manufacturer
- MICROSEMI CORP
- Voltage Test
- 50 V
- Operating Frequency
- 2700 MHz to 2900 MHz
- Ürün Durumu
- Active
- Transistor Element Material
- GALLIUM NITRIDE
- Part Life Cycle Code
- Active
- Vgs Gatesource Voltage
- - 8 V to 0 V
- Polaritychannel Type
- N-CHANNEL
- Highest Frequency Band
- S BAND
- Paket
- Bulk
- Package Style
- FLANGE MOUNT
- Gain
- 15 dB
- Transistor Type
- HEMT
- Montaj Tipi
- Surface Mount
- Id Continuous Drain Current
- 24 mA
- Transistor Application
- AMPLIFIER
- Number Of Elements
- 1
- Kılıf / Paket
- 55-QP
- Terminal Pozisyonu
- DUAL
- Frekans
- 2.7GHz ~ 2.9GHz
- Montaj Stili
- Flange Mount
- Package Body Material
- CERAMIC, METAL-SEALED COFIRED
- Power Output
- 290W
- Jesd30 Code
- R-CDFM-F2
- Pd Power Dissipation
- 517 W
- Configuration
- SINGLE
- Case Connection
- SOURCE
- Operating Mode
- DEPLETION MODE
- Additional Feature
- HIGH RELIABILITY
- RoHS
- Details
- Ds Breakdown Voltagemin
- 125 V
- Package Shape
- RECTANGULAR
- Operating Temperaturemax
- 250 °C
- Fabrika Paket Adedi
- 5
- Yüzey Montaj
- YES
- Seri
- V
- Number Of Terminals
- 2
- Fet Technology
- HIGH ELECTRON MOBILITY
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