MRF555T

Teknik Özellikler

Transistor Type

NPN

Radyasyon Dayanımı

No

Collectorbase Capacitancemax

5.5 pF

Minimum Operating Temperature

- 65 C

Transistor Polarity

NPN

Package Body Material

PLASTIC/EPOXY

Qualification Status

Not Qualified

Max Breakdown Voltage

16V

Polaritychannel Type

NPN

Collector Currentmax Ic

0.5 A

Package Shape

ROUND

Number Of Elements

1

Ambalaj

Cut Tape (CT)

Terminal Pozisyonu

RADIAL

Jesd30 Code

O-PRDB-F4

REACH Uyumluluk Kodu

unknown

Tip

RF Bipolar Small Signal

Continuous Collector Current

500 mA

Number Of Terminals

4

Kılıf / Paket

Power Macro

Max Collector Current

500mA

Collectoremitter Voltagemax

16 V

Collectoremitter Breakdown Voltage

16V

Montaj Tipi

Surface Mount

Birim Ağırlık

0.015104 oz

Max Power Dissipation

3W

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Lifecycle Status

OBSOLETE (Last Updated: 1 month ago)

RoHS

Details

Üretici Parça No

MRF555T

Pd Power Dissipation

3 W

Operating Frequency

470 MHz

Configuration

SINGLE

Temel Parça No

MRF555

ECCN Kodu

EAR99

Gain

11dB ~ 12.5dB

Maks. Çalışma Sıcaklığı

+ 200 C

Highest Frequency Band

ULTRA HIGH FREQUENCY BAND

Ürün Tipi

RF Bipolar Transistors