APTM20HM10FG

Teknik Özellikler

Kurşunsuz Kodu

Yes

Moisture Sensitivity Levels

1

Configuration

4 N-Channel (Half Bridge)

Vgsth Max Id

5V @ 5mA

Power Dissipation

694

Tedarikçi Cihaz Paketi

SP6

Jesd30 Code

R-XUFM-X12

Qualification Status

Not Qualified

Terminal Pozisyonu

UPPER

Montaj Tipi

Chassis Mount

Polaritychannel Type

N-CHANNEL

Operating Temperaturemax

150 °C

Avalanche Energy Rating Eas

2500 mJ

Drain Currentmax Id

175 A

Channel Type

Dual N

Ürün Durumu

Active

Package Shape

RECTANGULAR

Transistor Application

SWITCHING

Additional Feature

AVALANCHE RATED

Risk Rank

5.22

Technology

MOSFET (Metal Oxide)

Pin Sayısı

12

Ambalaj

Tube

Üretici Parça No

APTM20HM10FG

Paket

Bulk

Reflow Temperaturemax S

NOT SPECIFIED

Transistor Element Material

SILICON

Kılıf / Paket

SP6

Ihs Manufacturer

MICROSEMI CORP

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Formu

UNSPECIFIED

Terminal Kaplaması

TIN SILVER COPPER

Case Connection

ISOLATED

Number Of Elements

4

Number Of Terminals

12

Package Body Material

UNSPECIFIED

Part Life Cycle Code

Active

Ds Breakdown Voltagemin

200 V

Pulsed Drain Currentmax Idm

700 A

Rds On Max Id Vgs

12mOhm @ 87.5A, 10V