APTM10DUM02G

Teknik Özellikler

Tedarikçi Cihaz Paketi

SP6

Configuration

2 N-Channel (Dual)

Vgsth Max Id

4V @ 10mA

Kurşunsuz Kodu

Yes

Moisture Sensitivity Levels

1

Operating Temperaturemax

150 °C

Avalanche Energy Rating Eas

3000 mJ

Polaritychannel Type

N-CHANNEL

Montaj Tipi

Chassis Mount

Qualification Status

Not Qualified

Terminal Pozisyonu

UPPER

Jesd30 Code

R-XUFM-X7

Reflow Temperaturemax S

NOT SPECIFIED

Paket

Bulk

Üretici Parça No

APTM10DUM02G

Ambalaj

Tube

Transistor Application

SWITCHING

Additional Feature

AVALANCHE RATED

Risk Rank

5.23

Technology

MOSFET (Metal Oxide)

Pin Sayısı

7

Package Shape

RECTANGULAR

Drain Currentmax Id

495 A

Channel Type

Dual N

Ürün Durumu

Active

Terminal Formu

UNSPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ihs Manufacturer

MICROSEMI CORP

Kılıf / Paket

SP6

Transistor Element Material

SILICON

Part Life Cycle Code

Active

Number Of Terminals

7

Package Body Material

UNSPECIFIED

Terminal Kaplaması

TIN SILVER COPPER

Case Connection

ISOLATED

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

RoHS

Details

Rds On Max Id Vgs

2.5mOhm @ 200A, 10V

Pulsed Drain Currentmax Idm

1900 A