APTM100A13DG

Teknik Özellikler

Kurşunsuz Kodu

Yes

Moisture Sensitivity Levels

1

Maks. Çalışma Sıcaklığı

150 °C

Voltage Tolerance

5 %

Vgsth Max Id

5V @ 6mA

Configuration

2 N-Channel (Half Bridge)

Power Dissipation

1 W

Tedarikçi Cihaz Paketi

SP6

Jesd30 Code

R-XUFM-X4

Terminal Pozisyonu

UPPER

Qualification Status

Not Qualified

Kurşunsuz

Lead Free

Voltage Rating Dc

11 V

Montaj Tipi

Chassis Mount

Polaritychannel Type

N-CHANNEL

Avalanche Energy Rating Eas

1300 mJ

Operating Temperaturemax

150 °C

Channel Type

Dual N

Ürün Durumu

Active

Drain Currentmax Id

65 A

Package Shape

RECTANGULAR

Additional Feature

AVALANCHE RATED

Risk Rank

5.38

Technology

MOSFET (Metal Oxide)

Pin Sayısı

4

Transistor Application

SWITCHING

Empedans

20 Ω

Min. Çalışma Sıcaklığı

-65 °C

Paket

Bulk

Üretici Parça No

APTM100A13DG

Ambalaj

Tape & Reel (TR)

Reflow Temperaturemax S

NOT SPECIFIED

Transistor Element Material

SILICON

Kılıf / Paket

SP6

Ihs Manufacturer

MICROSEMI CORP

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Formu

UNSPECIFIED

Case Connection

ISOLATED

Number Of Elements

2

Terminal Kaplaması

TIN SILVER COPPER