APTC60VDAM24T3G

Teknik Özellikler

Drain Currentmax Abs Id

95 A

Operating Mode

ENHANCEMENT MODE

Configuration

2 N-Channel (Dual)

Vgsth Max Id

3.9V @ 5mA

Rds On Max Id Vgs

24mOhm @ 47.5A, 10V

Ds Breakdown Voltagemin

600 V

Power Dissipation

462

Max Power Dissipation

462 W

Qualification Status

Not Qualified

Technology

MOSFET (Metal Oxide)

Part Life Cycle Code

Active

Input Capacitance Ciss Max Vds

14400pF @ 25V

Avalanche Energy Rating Eas

1900 mJ

Pin Sayısı

25

Gate Charge Qg Max Vgs

300nC @ 10V

Number Of Terminals

20

Package Description

FLANGE MOUNT, R-XUFM-X20

Montaj

Chassis Mount, Screw

Lifecycle Status

Production (Last Updated: 2 months ago)

Transistor Application

SWITCHING

Montaj Tipi

Chassis Mount

Operating Temperaturemax

150 °C

Temel Ürün No

APTC60

ECCN Kodu

EAR99

Drain Currentmax Id

95 A

Rise Time

30 ns

Pulsed Drain Currentmax Idm

260 A

Transistor Element Material

SILICON

RoHS

Details

Kılıf / Paket

SP3

Rohs Code

Yes

Channel Type

Dual N

Ihs Manufacturer

MICROSEMI CORP

Package Body Material

UNSPECIFIED

Rds On Max

24 mΩ

Package Shape

RECTANGULAR

Seri

*

Ürün Tipi

Discrete Semiconductor Modules

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Min. Çalışma Sıcaklığı

-40 °C