APT50GN60BDQ3G

Teknik Özellikler

Configuration

Single

Gate Charge

325 nC

Ambalaj

Tube

Continuous Collector Current

107

Minimum Operating Temperature

- 55 C

Ürün Durumu

Active

Power Max

366 W

Current Collector Pulsed Icm

150 A

Montaj Tipi

Through Hole

Currentcollector Ic Max

107 A

Pd Power Dissipation

366 W

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 175 C

Switching Energy

1.185mJ (on), 1.565mJ (off)

Igbt Type

Trench Field Stop

Continuous Collector Current At25 C

107 A

RoHS

Details

Technology

Si

Vceon Max Vge Ic

1.85V @ 15V, 50A

Tedarikçi Cihaz Paketi

TO-247-3

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Paket

Tube

Reverse Recovery Time Trr

35 ns

Temel Ürün No

APT50GN60

Collector Emitter Voltage Vceo Max

600 V

Gateemitter Leakage Current

600 nA

Power Dissipation

366

Voltage Collector Emitter Breakdown Max

600 V

Giriş Tipi

Standard

Td Onoff25c

20ns/230ns

Maximum Gate Emitter Voltage

- 30 V, + 30 V

Ürün Tipi

IGBT Transistors

Fabrika Paket Adedi

1

Kılıf / Paket

TO-247-3

Collectoremitter Saturation Voltage

1.45 V

Test Conditions

400V, 50A, 4.3Ohm, 15V