M500

Teknik Özellikler

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

RoHS Durumu

Non-RoHS Compliant

Drain Currentmax Abs Id

30A

Polaritychannel Type

N-CHANNEL

Ds Breakdown Voltagemin

250V

Operating Temperature Max

150°C

Drainsource On Resistancemax

0.05Ohm

Qualification Status

Not Qualified

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating Eas

400 mJ

Additional Feature

AVALANCHE RATED, UL RECOGNIZED

Tool Type

Megohmmeter

JESD-609 Kodu

e1

Number Of Elements

2

Terminal Formu

THROUGH-HOLE

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Sayısı

5

Parça Durumu

Active

Power Dissipationmax Abs

125W

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

Not Applicable

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

130A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fabrika Tedarik Süresi

6 Weeks

Case Connection

ISOLATED

Yüzey Montaj

NO

Jesd30 Code

R-PSIP-T5