VMM90-09F

Teknik Özellikler

Kurşunsuz Kodu

yes

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

9

Rds On Max Id Vgs

76m Ω @ 65A, 10V

Hts

8541.29.00.95

Yayın Yılı

2005

Number Of Elements Per Chip

2

Fet Feature

Standard

Eccn Us

EAR99

Typical Rise Time Ns

180

Radyasyon Dayanımı

No

Montaj

Chassis Mount, Screw

Kurşunsuz

Lead Free

Temel Parça No

VMM

Pin Sayısı

9

Maximum Continuous Drain Current A

85

Channel Mode

Enhancement

Vgsth Max Id

5V @ 30mA

Seri

HiPerFET™

Package Width

62

Typical Gate Charge Vgs Nc

960@10V

Terminal Formu

UNSPECIFIED

Number Of Elements

2

Drain To Source Voltage Vdss

900V

Pcb Changed

9

Channel Type

N

Fabrika Tedarik Süresi

28 Weeks

RoHS Durumu

ROHS3 Compliant

Fet Type

2 N-Channel (Dual)

Typical Fall Time Ns

140

Process Technology

HiperFET

Ppap

No

Maximum Drain Source Voltage V

900

Drainsource On Resistancemax

0.076Ohm

Parça Durumu

LTB

Pin Sayısı

9

Configuration

Dual

Automotive

No

Maximum Gate Source Voltage V

±20

Gate To Source Voltage Vgs

20V