MWI35-12A7

Teknik Özellikler

Pcb Changed

17

Typical Collector Emitter Saturation Voltage V

2.2

Montaj

Chassis Mount, Through Hole

Input

Standard

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Cies Vce

2nF @ 25V

Package Width

45

Turn On Delay Time

100 ns

Igbt Type

NPT

Kurşunsuz

Lead Free

Kılıf / Paket

E2

Max Power Dissipation

280W

Pin Sayısı

2

Max Collector Current

62A

Turn On Time

180 ns

Additional Feature

UL RECOGNIZED

Maximum Gate Emitter Voltage V

±20

Transistor Application

POWER CONTROL

Maximum Gate Emitter Leakage Current Ua

0.2

Terminal Formu

UNSPECIFIED

Collectoremitter Breakdown Voltage

1.2kV

Turn Off Delay Time

500 ns

Terminal Sayısı

11

Maximum Collectoremitter Voltage V

1200

Automotive

No

Voltage Collector Emitter Breakdown Max

1200V

Transistor Element Material

SILICON

Minimum Operating Temperature C

-40

JESD-609 Kodu

e3

Terminal Pozisyonu

UPPER

Ntc Thermistor

No

Maximum Power Dissipation Mw

280

Package Height

17

Collector Emitter Voltage Vceo

2.8V

Polaritychannel Type

N-CHANNEL

Jesd30 Code

R-XUFM-X11

Package Length

107.5

Yayın Yılı

2007

Channel Type

N