MIXA30WB1200TED

Teknik Özellikler

Montaj Tipi

Chassis Mount

Configuration

Hex

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Collectoremitter Breakdown Voltage

1.2kV

Additional Feature

UL RECOGNIZED

Maximum Collectoremitter Voltage V

1200

Max Power Dissipation

150W

Transistor Element Material

SILICON

Eccn Us

EAR99

Voltage Collector Emitter Breakdown Max

1200V

Jesd30 Code

R-XUFM-X24

Polaritychannel Type

N-CHANNEL

Igbt Type

PT

Ppap

No

Terminal Formu

UNSPECIFIED

Max Collector Current

43A

Ambalaj

Box

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2011

Input

Three Phase Bridge Rectifier

Çalışma Sıcaklığı

-40°C~125°C TJ

Pin Sayısı

24

Parça Durumu

Active

Gateemitter Voltagemax

20V

RoHS Durumu

ROHS3 Compliant

Maximum Gate Emitter Leakage Current Ua

0.5

Number Of Elements

7

Package Length

107.5

Mounting

Screw

Turn On Time

110 ns

Kılıf / Paket

E2

Typical Collector Emitter Saturation Voltage V

1.8

Maximum Operating Temperature C

150

Eu Rohs

Compliant

Package Width

45

Transistor Application

POWER CONTROL

Montaj

Chassis Mount

Kurşunsuz Kodu

yes

Current Collector Cutoff Max

1.5mA

Maximum Continuous Collector Current A

43