MII200-12A4

Teknik Özellikler

Max Collector Current

270A

Package Height

30

Yayın Yılı

2000

Input Capacitance

11nF

Pin Sayısı

7

Typical Collector Emitter Saturation Voltage V

2.2

Max Power Dissipation

1.13kW

Transistor Application

MOTOR CONTROL

Turn On Delay Time

100 ns

Minimum Operating Temperature C

-40

Turn On Time

150 ns

Maximum Gate Emitter Leakage Current Ua

0.7

Package Length

110

Terminal Pozisyonu

UPPER

Montaj Tipi

Chassis Mount

Channel Type

N

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Bulk

Case Connection

ISOLATED

Vceon Max Vge Ic

2.7V @ 15V, 150A

Package Width

62

Voltage Collector Emitter Breakdown Max

1200V

Maximum Power Dissipation Mw

1130

Maximum Continuous Collector Current A

270

Maximum Operating Temperature C

150

Fabrika Tedarik Süresi

28 Weeks

Collector Emitter Voltage Vceo

1.2kV

Number Of Elements

2

Transistor Element Material

SILICON

Ntc Thermistor

No

Ppap

No

Input

Standard

Uzunluk

110mm

Kurşunsuz

Lead Free

Automotive

No

Eu Rohs

Compliant

Polaritychannel Type

N-CHANNEL

Çalışma Sıcaklığı

150°C TJ

Pcb Changed

7

Collectoremitter Breakdown Voltage

1.2kV