MIEB101H1200EH

Teknik Özellikler

Montaj

Chassis Mount

Maximum Continuous Collector Current A

183

Eu Rohs

Compliant

Max Power Dissipation

630W

Typical Collector Emitter Saturation Voltage V

1.8

Pin Sayısı

14

Maximum Power Dissipation Mw

630

Parça Durumu

Active

Gateemitter Voltagemax

20V

Ntc Thermistor

No

Maximum Gate Emitter Voltage V

±20

Power Max

630W

Terminal Pozisyonu

UPPER

Ppap

No

Jesd30 Code

R-PUFM-X14

Maximum Gate Emitter Leakage Current Ua

0.2

Package Width

62

Collector Emitter Voltage Vceo

2.2V

Current Collector Cutoff Max

300μA

Kurşunsuz

Lead Free

Ambalaj

Box

RoHS Durumu

ROHS3 Compliant

Transistor Application

POWER CONTROL

Mounting

Screw

Çalışma Sıcaklığı

-40°C~125°C TJ

Terminal Formu

UNSPECIFIED

Kılıf / Paket

E3

Collectoremitter Breakdown Voltage

1.2kV

Max Collector Current

183A

Transistor Element Material

SILICON

Input Capacitance Cies Vce

7.43nF @ 25V

Minimum Operating Temperature C

-40

Turn On Time

175 ns

Vceon Max Vge Ic

2.2V @ 15V, 100A

Montaj Tipi

Chassis Mount

Configuration

Quad

Case Connection

ISOLATED

Input

Standard

Maximum Collectoremitter Voltage V

1200

Additional Feature

UL RECOGNIZED