IXYR100N120C3

Teknik Özellikler

Number Of Elements

1

Supplier Package

ISOPLUS 247

Channel Type

N

Gateemitter Thr Voltagemax

5V

Maximum Gate Emitter Leakage Current Ua

0.1

Pin Sayısı

3

Additional Feature

AVALANCHE RATED

Case Connection

ISOLATED

Power Dissipation

484W

Kılıf / Paket

TO-247-3

Maximum Operating Temperature C

175

Collector Emitter Voltage Vceo

1.2kV

Typical Collector Emitter Saturation Voltage V

2.9

Yayın Yılı

2012

Voltage Collector Emitter Breakdown Max

1200V

Maximum Power Dissipation Mw

484

Automotive

No

Eu Rohs

Compliant with Exemption

Gate Charge

270nC

Çalışma Sıcaklığı

-55°C~175°C TJ

Seri

GenX3™, XPT™

Giriş Tipi

Standard

Test Conditions

600V, 100A, 1 Ω, 15V

Vceon Max Vge Ic

3.5V @ 15V, 100A

Switching Energy

6.5mJ (on), 2.9mJ (off)

Genişlik

5.21mm

Mounting

Through Hole

Maximum Collectoremitter Voltage V

1200

Collectoremitter Breakdown Voltage

1.2kV

Tab

Tab

Montaj Tipi

Through Hole

Turn Off Delay Time

123 ns

Transistor Element Material

SILICON

Pin Sayısı

247

Jesd30 Code

R-PSIP-T3

Yükseklik

21.34mm

Polaritychannel Type

N-CHANNEL

Montaj

Through Hole

Td Onoff25c

32ns/123ns

Max Power Dissipation

484W