IXXH100N60B3

Teknik Özellikler

Typical Collector Emitter Saturation Voltage V

1.5

Transistor Element Material

SILICON

Case Connection

COLLECTOR

Operating Temperature Max

175C

Mounting

Through Hole

Çalışma Sıcaklığı

-55°C~175°C TJ

Package Width

5.3(Max)

Gateemitter Thr Voltagemax

5.5V

Terminal Pozisyonu

SINGLE

Tab

Tab

Pcb Changed

3

Automotive

No

Number Of Elements

1

Collectoremitter Saturation Voltage

1.8V

Maximum Gate Emitter Voltage V

±20

Ppap

No

Td Onoff25c

30ns/120ns

Additional Feature

AVALANCHE RATED

Package Length

16.26(Max)

Eu Rohs

Compliant with Exemption

Collectoremitter Breakdown Voltage

600V

Current Collector Pulsed Icm

480A

Power Dissipation

830W

Channel Type

N

Svhc

Yes

Max Power Dissipation

830W

Max Collector Current

220A

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Gate Charge

143nC

Polaritychannel Type

N-CHANNEL

Maximum Power Dissipation Mw

830

Transistor Application

POWER CONTROL

Minimum Operating Temperature C

-55

Kılıf / Paket

TO-247-3

Ambalaj

Tube

Collector Emitter Voltage Vceo

1.8V

Seri

GenX3™, XPT™

Switching Energy

1.9mJ (on), 2mJ (off)

Terminal Sayısı

3