IXTY1R4N120P-TRL

Teknik Özellikler

Channel Type

N

Maximum Diode Forward Voltage V

1.5

Montaj Stili

SMD/SMT

Typical Turnoff Delay Time Ns

78

Maximum Idss Ua

5

Maximum Gate Threshold Voltage V

4.5

Kılıf / Paket

TO-252-3

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

86000

Typical Gate To Drain Charge Nc

12.8

Typical Reverse Recovery Time Ns

900

Typical Gate Charge10v Nc

24.8

Process Technology

Polar

Ambalaj

Tape and Reel

Maximum Continuous Drain Current A

1.4

Mounting

Surface Mount

Maximum Gate Source Voltage V

±20

Minimum Gate Threshold Voltage V

2.5

Maximum Gate Source Leakage Current Na

100

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Turnon Delay Time Ns

25

Operating Junction Temperature C

150

Automotive

No

Channel Mode

Enhancement

Typical Input Capacitance Vds Pf

666@25V

Maximum Drain Source Voltage V

1200

Pcb Changed

2

Typical Gate Charge Vgs Nc

24.8@10V

Number Of Elements Per Chip

1

Tab

Tab

Typical Output Capacitance Pf

36

Package Width

6.22(Max)

Maximum Positive Gate Source Voltage V

30

Typical Gate Plateau Voltage V

4.75

Pd Power Dissipation

86 W

Eu Rohs

Compliant

Package Length

6.73(Max)

Ppap

No

Pin Sayısı

3

Configuration

Single