IXTT1N250HV

Teknik Özellikler

Typical Fall Time Ns

39

Typical Gate Charge Vgs Nc

41@10V

Maximum Drain Source Resistance Mohm

40000@10V

Svhc Exceeds Threshold

Yes

Configuration

Single

Pcb Changed

2

Maximum Drain Source Voltage V

2500

Typical Output Capacitance Pf

77

Power Dissipation

250W

Typical Rise Time Ns

25

Minimum Gate Threshold Voltage V

2

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

41

Mounting

Surface Mount

Ppap

No

Pin Sayısı

3

Lead Shape

Gull-wing

Maximum Pulsed Drain Current Tc25c A

6

Maximum Gate Source Voltage V

±20

Typical Turnon Delay Time Ns

69

Category

Power MOSFET

Tab

Tab

Eu Rohs

Compliant with Exemption

Operating Junction Temperature C

150

Maximum Diode Forward Voltage V

1.5

Maximum Operating Temperature C

150

Svhc

Yes

Package Length

16.05(Max)

Package Height

5.1(Max)

Package Width

14(Max)

Parça Durumu

Active

Continuous Drain Current Id

1.5A

Supplier Package

D3PAK-HV

Automotive

No

Maximum Continuous Drain Current A

1.5

Maximum Power Dissipation Mw

250000

Maximum Gate Threshold Voltage V

4

Maximum Idss Ua

25

Minimum Operating Temperature C

-55

Maximum Gate Source Leakage Current Na

100