IXTQ74N20P

Teknik Özellikler

Configuration

Single

Terminal Kaplaması

Matte Tin (Sn)

Power Dissipation

400W

Pcb Changed

3

Transistor Application

SWITCHING

Typical Rise Time Ns

21

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ppap

No

Number Of Elements

1

Maximum Gate Source Voltage V

±20

Avalanche Energy Rating Eas

1000 mJ

Lead Shape

Through Hole

Drain To Source Breakdown Voltage

200V

Typical Turnon Delay Time Ns

23

Turn Off Delay Time

60 ns

Tab

Tab

Ambalaj

Tube

Rise Time

21ns

Montaj Tipi

Through Hole

Input Capacitance Ciss Max Vds

3300pF @ 25V

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Package Width

4.9(Max)

Parça Durumu

Active

Package Length

15.8(Max)

Continuous Drain Current Id

74A

Fet Type

N-Channel

Automotive

No

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Power Dissipation Max

480W Tc

Maximum Continuous Drain Current A

74

Pulsed Drain Currentmax Idm

200A

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

60

Case Connection

DRAIN

Typical Gate Charge Vgs Nc

107@10V

Maximum Drain Source Resistance Mohm

34@10V

Qualification Status

Not Qualified

Typical Fall Time Ns

21