IXTQ110N10P

Teknik Özellikler

Typical Turnoff Delay Time Ns

65

Pulsed Drain Currentmax Idm

250A

Vgs Th Gatesource Threshold Voltage

5 V

Minimum Operating Temperature C

-55

Power Dissipation Max

480W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Maximum Continuous Drain Current A

110

Hts

8541.29.00.95

Maks. Çalışma Sıcaklığı

+ 175 C

Automotive

No

Fet Type

N-Channel

Continuous Drain Current Id

110A

REACH Uyumluluk Kodu

unknown

Transistor Polarity

N-Channel

Parça Durumu

Active

Package Width

4.9(Max)

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Package Length

15.8(Max)

Input Capacitance Ciss Max Vds

3550pF @ 25V

Rise Time

25ns

Ambalaj

Tube

Montaj Tipi

Through Hole

Turn Off Delay Time

65 ns

Minimum Operating Temperature

- 55 C

Tab

Tab

Drain To Source Breakdown Voltage

100V

Typical Turnon Delay Time Ns

21

Avalanche Energy Rating Eas

1000 mJ

Maximum Gate Source Voltage V

±20

Lead Shape

Through Hole

Ppap

No

Number Of Elements

1

Montaj Stili

Through Hole

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Typical Rise Time Ns

25

Power Dissipation

480W

Rds On Drainsource Resistance

15 mOhms