IXTP8N65X2

Teknik Özellikler

Maximum Idss Ua

10

Maximum Gate Threshold Voltage V

5

Maximum Power Dissipation Mw

150000

Hts

8541.29.00.95

Maximum Continuous Drain Current A

8

Automotive

No

Supplier Package

TO-220

Typical Turnoff Delay Time Ns

53

Typical Input Capacitance Vds Pf

800@25V

Channel Type

N

Channel Mode

Enhancement

Maximum Gate Source Leakage Current Na

100

Minimum Operating Temperature C

-55

Maximum Operating Temperature C

150

Eccn Us

EAR99

Parça Durumu

Active

Package Width

4.83(Max)

Package Height

9.15(Max)

Package Length

10.66(Max)

Maximum Gate Source Voltage V

±30

Pin Sayısı

3

Ppap

No

Mounting

Through Hole

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

24

Maximum Drain Source Voltage V

650

Pcb Changed

3

Configuration

Single

Maximum Drain Source Resistance Mohm

500@10V

Typical Gate Charge Vgs Nc

12@10V

Typical Fall Time Ns

24

Typical Gate Charge10v Nc

12

Number Of Elements Per Chip

1

Typical Rise Time Ns

28