IXTP2N100P

Teknik Özellikler

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

25

Maximum Gate Source Voltage V

±20

Ppap

No

Pin Sayısı

3

Mounting

Through Hole

Typical Gate Charge10v Nc

24.3

Number Of Elements Per Chip

1

Typical Rise Time Ns

29

Pcb Changed

3

Maximum Drain Source Voltage V

1000

Svhc Exceeds Threshold

Yes

Configuration

Single

Typical Fall Time Ns

27

Typical Gate Charge Vgs Nc

24.3@10V

Maximum Drain Source Resistance Mohm

7500@10V

Typical Input Capacitance Vds Pf

655@25V

Typical Turnoff Delay Time Ns

80

Channel Mode

Enhancement

Channel Type

N

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

86000

Maximum Continuous Drain Current A

2

Automotive

No

Supplier Package

TO-220

Eccn Us

EAR99

Parça Durumu

Active

Package Width

4.83(Max)

Package Height

9.15(Max)

Package Length

10.66(Max)

Svhc

Yes

Maximum Operating Temperature C

150