IXTP220N04T2

Teknik Özellikler

Drain To Source Breakdown Voltage

40V

Typical Turnon Delay Time Ns

15

Turn Off Delay Time

31 ns

Tab

Tab

Ppap

Unknown

Akım

75A

Number Of Elements

1

Avalanche Energy Rating Eas

600 mJ

Maximum Gate Source Voltage V

±20

Transistor Application

SWITCHING

Typical Rise Time Ns

21

Gerilim

40V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

Single

Terminal Kaplaması

Matte Tin (Sn)

Power Dissipation

360W

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

31

Automotive

Unknown

Fet Type

N-Channel

Power Dissipation Max

360W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Maximum Continuous Drain Current A

220

Hts

8541.29.00.95

Package Width

4.83(Max)

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Package Length

10.66(Max)

Package Height

9.15(Max)

Jedec95 Code

TO-220AB

Continuous Drain Current Id

220A

Rise Time

21ns

Ambalaj

Tube

Montaj Tipi

Through Hole

Input Capacitance Ciss Max Vds

6820pF @ 25V

Element Configuration

Single

Category

Power MOSFET