IXTP20N65X

Teknik Özellikler

Mounting

Through Hole

Pin Sayısı

3

Ppap

No

Maximum Gate Source Voltage V

±30

Typical Turnon Delay Time Ns

18

Category

Power MOSFET

Tab

Tab

Eu Rohs

Compliant with Exemption

Maximum Drain Source Resistance Mohm

210@10V

Typical Gate Charge Vgs Nc

35@10V

Typical Fall Time Ns

22

Configuration

Single

Maximum Drain Source Voltage V

650

Pcb Changed

3

Typical Rise Time Ns

30

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

35

Supplier Package

TO-220

Automotive

No

Maximum Continuous Drain Current A

20

Maximum Gate Threshold Voltage V

5.5

Maximum Idss Ua

5

Maximum Power Dissipation Mw

320000

Minimum Operating Temperature C

-55

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Channel Mode

Enhancement

Typical Turnoff Delay Time Ns

46

Typical Input Capacitance Vds Pf

1390@25V

Maximum Operating Temperature C

150

Package Height

9.15(Max)

Package Length

10.66(Max)

Parça Durumu

NRND

Package Width

4.83(Max)

Eccn Us

EAR99