IXTP160N10T

Teknik Özellikler

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

6600@25V

Vgsth Max Id

4.5V @ 250μA

Channel Type

N

Channel Mode

Enhancement

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

TrenchMV™

Maximum Power Dissipation Mw

430000

Rad Hardened

No

Supplier Package

TO-220

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.007Ohm

Maximum Operating Temperature C

175

Gate Charge Qg Max Vgs

132nC @ 10V

Fall Time Typ

42 ns

Rds On Max Id Vgs

7m Ω @ 25A, 10V

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

17 Weeks

Eu Rohs

Compliant with Exemption

Yayın Yılı

2006

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Polarity

N

Mounting

Through Hole

Pin Sayısı

3

Number Of Elements Per Chip

1

Radyasyon Dayanımı

No

Typical Gate Charge10v Nc

132

Current Continuous Drain Id25

160A Tc

Kılıf / Paket

TO-220-3

ECCN Kodu

EAR99

Montaj

Through Hole

Maximum Drain Source Voltage V

100

Çalışma Sıcaklığı

-55°C~175°C TJ

Tip

Power MOSFET

Drainsource Onvolt

100(V)

Vgs Max

±30V