IXTK100N25P

Teknik Özellikler

Minimum Operating Temperature

- 55 C

Eu Rohs

Compliant with Exemption

Tab

Tab

Category

Power MOSFET

Typical Turnon Delay Time Ns

25

Maximum Gate Source Voltage V

±20

Vds Drainsource Breakdown Voltage

250 V

Pin Sayısı

3

Ppap

No

Mounting

Through Hole

Montaj Stili

Through Hole

Id Continuous Drain Current

100 A

Typical Gate Charge10v Nc

185

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Rise Time Ns

26

Kılıf / Paket

TO-264-3

Maximum Drain Source Voltage V

250

Rds On Drainsource Resistance

27 mOhms

Pcb Changed

3

Configuration

Single

Maximum Drain Source Resistance Mohm

27@10V

Typical Gate Charge Vgs Nc

185@10V

Typical Fall Time Ns

28

Typical Turnoff Delay Time Ns

100

Typical Input Capacitance Vds Pf

6300@25V

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Seri

IXTK100N25

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Qg Gate Charge

185 nC

Maximum Power Dissipation Mw

600000

Maximum Continuous Drain Current A

100

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Supplier Package

TO-264

Transistor Polarity

N-Channel

Package Width

5.31(Max)