IXTH96N25T

Teknik Özellikler

Pd Power Dissipation

625 W

Process Technology

TrenchHV

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Maximum Gate Source Leakage Current Na

200

Typical Input Capacitance Vds Pf

6100@25V

Supplier Package

TO-247

Maximum Gate Threshold Voltage V

5

Maximum Power Dissipation Mw

625000

Vgs Gatesource Voltage

- 30 V, + 30 V

Kılıf / Paket

TO-247-3

Id Continuous Drain Current

96 A

Typical Gate Charge10v Nc

114

Number Of Elements Per Chip

1

Svhc Exceeds Threshold

Yes

Maximum Drain Source Resistance Mohm

29@10V

Typical Gate Charge Vgs Nc

114@10V

Typical Fall Time Ns

28

Maximum Drain Source Voltage V

250

Category

Power MOSFET

Eu Rohs

Compliant with Exemption

Pin Sayısı

3

Mounting

Through Hole

Vds Drainsource Breakdown Voltage

250 V

Parça Durumu

Active

Package Width

5.3(Max)

Package Length

16.26(Max)

Package Height

21.46(Max)

Transistor Polarity

N-Channel

Svhc

Yes

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

59

Automotive

No

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Idss Ua

5

Maximum Continuous Drain Current A

96

Typical Rise Time Ns

22