IXTH20N60

Teknik Özellikler

Typical Turnoff Delay Time Ns

70

Maximum Drain Source Resistance Mohm

350@10V

Parça Durumu

NRND

Eccn Us

EAR99

Typical Gate Charge10v Nc

150

Svhc

Yes

Mounting

Through Hole

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

600

Typical Fall Time Ns

40

Maximum Operating Temperature C

150

Category

Power MOSFET

Svhc Exceeds Threshold

Yes

Pin Sayısı

3

Channel Type

N

Eu Rohs

Compliant with Exemption

Package Height

21.46(Max)

Typical Rise Time Ns

43

Ppap

No

Typical Input Capacitance Vds Pf

4500@25V

Minimum Operating Temperature C

-55

Pcb Changed

3

Package Length

16.26(Max)

Configuration

Single

Maximum Power Dissipation Mw

300000

Channel Mode

Enhancement

Maximum Gate Source Voltage V

±20

Tab

Tab

Typical Turnon Delay Time Ns

20

Supplier Package

TO-247AD

Material

Si

Package Width

5.3(Max)

Maximum Continuous Drain Current A

20

Process Technology

MegaMOS

Typical Gate Charge Vgs Nc

150@10V

Automotive

No